Non-Volatile Memory Boom Could Reshape AI and Computing by 2035
A new report from CNN highlights the rapid growth of non-volatile memory technologies, set to transform computing and AI applications. Between 2024 and 2035, revenue from these innovations could surge over 300 times, while shipping capacity may increase more than 9,000-fold. The shift is driven by demand for energy efficiency, faster performance, and new uses in edge AI and battery-powered devices.
The 'New Memories: Not Just for AI' report examines how emerging non-volatile memories—such as phase change memory (PCM), resistive RAM (ReRAM), ferroelectric RAM (FRAM), and magnetic RAM (MRAM)—are replacing older technologies. These solutions are already displacing SRAM, NOR flash, and even some DRAM in embedded systems. Companies like FMC (Dresden), Neumonda, and Swissbit have launched commercial products, integrating ferroelectric memory into DRAM+ and Cache+ setups for edge computing and advanced packaging.
Non-volatile main memory and cache designs cut power consumption, enable new low-energy modes, and speed up recovery after shutdowns. Data centres and computing devices benefit from both energy savings and performance gains. AI inference, in particular, relies on efficient memory for training models and real-time applications at the edge.
Investment in production capacity is also accelerating. Capital spending on new memory technologies is forecast to grow 1,200 times by 2035. This expansion reflects the growing role of non-volatile memories in AI monetisation and broader computing markets.
The report underscores a major shift in memory technology, with non-volatile solutions becoming central to AI, edge computing, and power-efficient devices. By 2035, these advancements could dominate markets previously reliant on SRAM, NOR flash, and DRAM. The projected growth in revenue and capacity signals a fundamental change in how memory is designed and deployed.
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